人物簡歷
教育背景
2002.09－2007.06 四川大學，微電子專業，碩博連讀
1998.09－2002.06 四川大學，微電子技術專業，學士學位
工作履歷
2007.07－現在 電子科技大學 電子薄膜與集成器件國家重點實驗室
研究方向
研究方向
半導體單項工藝研究
光刻、刻蝕、薄膜沉積等
寬禁帶半導體器件與工藝研究
研究SiC器件與工藝
納米器件
納米級MOS器件及GaAs納米線光電器件
研究條件
電子薄膜與集成器件國家重點實驗室擁有國際一流的科研裝備條件，建成涵蓋了器件/電路設計、薄膜材料製備、器件微細加工與分析測試等工藝流程的4個平台。電路設計平台擁有多台Sun、Dell工作站及微波電路設計與仿真軟體；薄膜製備與處理工藝平台包括射頻/直流磁控濺射系統、脈衝雷射沉積系統(PLD)、雷射分子束外延系統(L-MBE)、蒸發系統以及退火爐、快速晶化爐等；微細加工平台擁有1000級超淨間、4~6英寸基片0.56微米和1.2微米光刻機、反應離子刻蝕機等，可完成各種薄膜集成器件的研究和小批量製作；分析和性能測試平台包括掃描電鏡、掃描探針顯微鏡、透射電子顯微鏡、X射線衍射儀，以及LCR儀、矢量網路分析儀、阻抗分析儀等。
榮譽獎勵
2013年，電子科技大學先進個人
2006年，芯源一等獎學金
代表性論文
1. Morphological and compositional changes in the SiO2/SiC interfacial layer induced by thermal annealing of different temperature
Zhiqin Zhong, Luda Zheng, Shuya Wang, et al. Advanced Materials Research, 2014, 884-885:304-307
2. Effect of Ar annealing temperature on the densification of SiO2 film grown by thermal oxidation on 4H-SiC
ZHONG Zhi-qin, SUN Zi-jiao, GE Wei-wei, et al. Journal of University of Electronic Science and Technology of China, 2014,43(2):292-295
3. Effect of Ar annealing temperature on SiO2/SiC: SiO2densification change causing leakage current reduction
Zhiqin Zhong, Zijiao Sun, Shuya Wang, et al. The European Physical Journal Applied Physics, 2013, 62(2): 20301
4. Effect of Ar annealing on oxide-4H-SiC interface studied by spectroscopic ellipsometry and atomic force microscopy
Zhiqin Zhong, Guojun Zhang, Shuya Wang, et al. Materials Science in Semiconductor Processing, 2013, 16: 2028-2031
5. Effect of Different Annealing Temperature on 4H-SiC Schottky Diodes,
Sun Zijiao,Zhong Zhiqin, Wang Shuya, et al. Piezoelectrics & Acoustooptics, 2013, 35:419-422
6. Inductively Coupled Plasma Etching of Pt/Ti Electrodes in Cl-Based Plasma
Z.Q. Zhong, C.T. Yang, G.J. Zhang, S.Y. Wang and L.P. Dai, Advanced Materials Research, 2013, 721: 346-349
7. Spectroscopic Ellipsometry Study on Hydrogenated Amorphous Silicon Thin Films Deposited by Low Frequency PECVD
ZHONG Zhiqin, ZHANG Guojun, WANG Shuya, et al. Semiconductor optoelectronic, 2012，33(3):385-389
8. Aluminum Nitride Flims Fabricated by Mid-frequency Magnetron Sputtering
Zhong Zhiqin, Zhang Guojun, Yangjie, et al. Semiconductor Phonics and Technology, 2010, 16(4):127-131
9. Etching mechanism of barium strontium titanate (BST) thin films in CHF3/Ar plasma
DAI LiPing, WANG ShuYa, SHU Ping, ZHONG ZhiQin, et al, Chinese Science Bulletin, 2011, 56(21):2267-2271
10. Study on the BST film covered junction terminal of power semiconductor device
Ge Weiwei, Zhang Guojun, Zhong Zhiqin, et al, Electronic Components and Materials, 2012, 31(12):46-49
11. Optimization Design of LDMOS Device with Drift Region Covered by High-k Thin Film
WANG Weibin, ZHAO Yuanyuan, ZHONG Zhiqin, et al. Microelectronics, 2011, 42(2):261-265
12. Study on the Spring Constant of O-Shaped MEMS Planar Microsprings
Wu Pengfei, Zhang Guojun, Zhong Zhiqin, et al. Micronanoelectronic Technology, 2011, 48(10):660-663
