傘海生

Haishen Haishen iden

研究領域：MEMS感測器、射頻MEMS器件、微光機電系統及器件、微能源器件及系統、微波光電子、光纖光學、材料物理等。
教學領域：機電工程、測控技術、物理科學與套用
簡歷：1993年畢業於西南科技大學，獲機械製造專業工學學士學位。同年在甘肅建築材料工業學校任教。
2001年在蘭州大學物理科學與技術學院攻讀碩士學位。
2004年在中科院半導體所攻讀博士學位（與蘭州大學聯合培養）。
2006年博士畢業，獲材料物理專業工學博士學位。同年到廈門大學物理機電學院從事博士後研究，
2008年出站並留校任教。迄今為止發表文章28篇，其中SCI收錄11篇，EI收錄17篇，申請專利4項。
主要研究成果
1. Hai-sheng San, Xu-yuan Chen, Peng Xu, Gang Li, Lin-xian Zhan, “Using metal-insulator-semiconductor structure to investigate dielectric charging in capacitive RF MEMS switches”, Applied Physics Letter, Vol.93, 063506, 2008.Slected for the August 25, 2008 issue of Virtual Journal of Nanoscale Science & Technology.
2. Haisheng San, Lin Li, Gang Li, Xuyuan Chen, Boxue Feng, “Frequency response measurement of high-speed photodetectors using the spectrum power method in a delay self-heterodyne system”, Appl. Phys. B, Vol.88, pp.411-415, 2007
3. Haisheng San, Gang Li, Xuyuan Chen, “Control of Dielectrics Charging and Discharging in Capacitive RF MEMS Switches”, Accepted by IEEE Trans. Electron Devices.
4. Haisheng San, Bin Li, Boxue Feng, Yuyang He, Chong Chen, “Point-defects-induced band edge displacements and band-gap narrowing in CdIn2O4thin films”, Thin Solid Films, Vol.483, pp 245-250, 2005.
5. San Haisheng, Chen Chong, He Yuyang, et al., “Study on electrical properties of n-type transparent and conductive Cdln2O4thin film and the optimum preparation parameters for large-area film”, ACTA PHYSICA SINICA, Vol. 54 (4): 1736-1741, Apr 2005.
6. San Haisheng, Li Bin L, Feng Boxue, et al., “Effect on optical band-gap of transparent and conductive Cdln2O4thin film due to defects-induced Burstein-Moss and band-gap narrowing characteristics”, ACTA PHYSICA SINICA, Vol. 54 (2): 842-847, Feb 2005.
7. Haisheng San, Jimin Wen, Liang Xie, Ninghua Zhu, Boxue Feng, “High-Speed Photodetector Characterization Using Tunable Laser by Optical Heterodyne Technique”, Proc. of SPIE, Vol. 6020, pp 60200A, 2005.(Invited paper)
8. Hai-sheng San, Xu-yuan Chen, Peng Xu,Fang-qiang. Li, Mei-Ying Cheng, “A MEMS-based infrared array emitter for combat identification”, Proc. of SPIE Vol. 6940, 69401T, (2008)
申請專利
1. 微波光子晶體在高速光電子器件封裝中的套用，發明專利申請號：200510055278 ,公開號：1835308 (已授權)
2. 具有微波光子晶體結構接地層的高速印刷電路板, 發明專利申請號：200510011210.1
3. 一種微電子機械紅外光源及其製備方法，發明專利申請號：200810070672.4
4. 複合型微能源系統及其製備方法，國家發明專利申請號：200810070682.4